Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode
Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode
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DOI：
10.1063/1.4890497
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发表时间：
2014-07-21
影响因子：
3.2
通讯作者：
Martin, R. W.
中科院分区：
文献类型：
--
作者：
Wallace, M. J.;Edwards, P. R.;Martin, R. W.
本文利用电子束感生电流（EBIC）、阴极发光（CL）和电致发光（EL）结合的方法，研究了接触式InGaN/GaN发光二极管（LED）。参数之间的相关性，如EBIC和CL强度，进行了研究，作为施加的偏压的函数。CL和EBIC图揭示了小区域，2-10 μ m的大小，这增加了非辐射复合率和/或较低的电导率。这些斑点的CL发射发生蓝移，位移30-40 meV。由于面内扩散和生长方向上的漂移之间的竞争，增加反向偏压导致斑点的尺寸减小。EL映射显示大的明亮区域（类似于100 μ m），其也具有增加的EBIC，指示p型和/或n-GaN中的导电性增加的域。(C)2014年作者。
Micron-scale mapping has been employed to study a contacted InGaN/GaN LED using combined electroluminescence (EL), cathodoluminescence (CL), and electron beam induced current (EBIC). Correlations between parameters, such as the EBIC and CL intensity, were studied as a function of applied bias. The CL and EBIC maps reveal small areas, 2-10 mu m in size, which have increased nonradiative recombination rate and/or a lower conductivity. The CL emission from these spots is blue shifted, by 30-40 meV. Increasing the reverse bias causes the size of the spots to decrease, due to competition between in-plane diffusion and drift in the growth direction. EL mapping shows large bright areas (similar to 100 mu m) which also have increased EBIC, indicating domains of increased conductivity in the p and/or n-GaN. (C) 2014 Author(s).