Measurement of Residual Stress and Young's Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon.
Measurement of Residual Stress and Young's Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon.
复制标题
硅基单晶微机械3C-SiC层残余应力和杨氏模量的测量<111><100>。
DOI：
10.3390/mi12091072
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发表时间：
2021-09-03
期刊：
影响因子：
3.4
通讯作者：
Roncaglia A
中科院分区：
文献类型：
--
作者：
Sapienza S;Ferri M;Belsito L;Marini D;Zielinski M;La Via F;Roncaglia A
3C-SiC是一种新兴的MEMS系统材料，这要归功于其出色的机械性能（高杨氏模量和低密度），使器件能够以更高的频率在给定的几何形状下工作。这种材料的机械性能很大程度上取决于材料质量、缺陷密度和应力。由于这个原因，SiC在Si基微机电系统（MEMS）制造技术中的使用已经非常有限。在这项工作中，完整的表征的杨氏模量和残余应力的单晶3C-SiC层与不同的掺杂类型生长在<100>和<111>取向的硅衬底上的报告，使用双固定梁和应变计的谐振频率的组合。这样，残余应力和残余应变都可以独立测量，杨氏模量可以通过虎克定律获得。从这些测量中，已经观察到杨氏模量取决于层的厚度、取向、掺杂和应力。在这项工作中获得了非常好的杨氏模量值，即使是非常薄的层（薄于1 μm），这可以提供实现非常灵敏的应变传感器的机会。
3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young’s modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this material depend strongly on the material quality, the defect density, and the stress. For this reason, the use of SiC in Si-based microelectromechanical system (MEMS) fabrication techniques has been very limited. In this work, the complete characterization of Young’s modulus and residual stress of monocrystalline 3C-SiC layers with different doping types grown on <100> and <111> oriented silicon substrates is reported, using a combination of resonance frequency of double clamped beams and strain gauge. In this way, both the residual stress and the residual strain can be measured independently, and Young’s modulus can be obtained by Hooke’s law. From these measurements, it has been observed that Young’s modulus depends on the thickness of the layer, the orientation, the doping, and the stress. Very good values of Young’s modulus were obtained in this work, even for very thin layers (thinner than 1 μm), and this can give the opportunity to realize very sensitive strain sensors.