Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films
Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films
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DOI：
10.1103/physrevb.87.024401
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发表时间：
2013-01-02
影响因子：
3.7
通讯作者：
Hirohata, A.
中科院分区：
文献类型：
--
作者：
Fleet, L. R.;Yoshida, K.;Hirohata, A.
了解界面对电子自旋注入的影响对于半导体自旋电子学的发展具有重要意义。由于小的晶格失配，Fe/GaAs(001)是研究这些效应的主要系统之一。我们报道了实验观察到的Fe/GaAs(001)界面与自旋输运性质之间的关系。利用高角度环形暗场扫描电子显微镜，我们观察到一个明显的突变界面，在同一薄膜中也观察到一些部分混合区域。我们报道，对于三端器件，实现了没有偏压依赖的极化反转的可重复性行为。利用从头算方法对实验观察到的界面进行了计算，结果表明少数载流子对输运的贡献与界面结构密切相关。DOI：10.1103/PhysRevB.87.024401
Understanding the effect of the interface on electrical spin injection is of great importance for the development of semiconductor spintronics. Fe/GaAs(001) is one of the leading systems for exploring these effects due to the small lattice mismatch. We report on the correlation between the experimentally observed Fe/GaAs(001) interface with the spin-transport properties. Using high-angle annular dark-field scanning transmission electron microscopy, we observe a predominantly abrupt interface with some regions of partial mixing also observed in the same film. We report that reproducible behavior with no bias-dependent polarization inversion was achieved for three-terminal devices. Using ab initio calculations of the experimentally observed interfaces, we show that the contribution to the transport from minority carriers is strongly dependent on the interface structure. DOI: 10.1103/PhysRevB.87.024401