The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory
The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory
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DOI：
10.1088/0022-3727/46/26/264001
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发表时间：
2013-07-03
影响因子：
3.4
通讯作者：
Bimberg, D.
中科院分区：
文献类型：
--
作者：
Hayne, M.;Young, R. J.;Bimberg, D.
介绍和探讨了在室温下嵌入GaAs中的GaSb纳米结构作为基于电荷的存储元件的潜力。横截面扫描隧道显微镜直接探测和优化的分子束外延纳米结构的生长。结构分析的结果与深能级瞬态光谱的电测量相结合，显示出良好的协议与理论计算模型的电子结构的纳米结构，使用8带k.p理论。空穴局域化能量超过600毫电子伏的量子点和近100%的材料之间的对比度丰富的砷化镓量子环（QRs）和周围的GaAs矩阵被揭示（无混杂）。光学测量证实了孔定位的深度，并证明大大低于非均匀加宽比以前报道的。多个峰部分解决在系综光致发光的GaSb/GaAs QRs，并归因于从离散数量的受限空穴的电荷状态。
The potential for GaSb nanostructures embedded in GaAs to operate as charge-based memory elements at room temperature is introduced and explored. Cross-sectional scanning-tunnelling microscopy is employed to directly probe and optimize the growth of nanostructures by molecular beam epitaxy. The results of structural analysis are combined with electrical measurements made with deep-level transient spectroscopy, showing excellent agreement with theoretical calculations which model the electronic structure of the nanostructures using 8-band k.p theory. Hole-localization energies exceeding 600 meV in quantum dots and near-100% material contrast between GaSb-rich quantum rings (QRs) and the surrounding GaAs matrix are revealed (no intermixing). Optical measurements confirm the depth of the hole localization, and demonstrate substantially lower inhomogeneous broadening than has previously been reported. Multiple peaks are partially resolved in ensemble photoluminescence of GaSb/GaAs QRs, and are attributed to charge states from discrete numbers of confined holes.