Stress Power Dependent Self-Heating Degradation of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors
Stress Power Dependent Self-Heating Degradation of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors
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DOI：
10.1109/ted.2007.908907
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发表时间：
2007-11
影响因子：
3.1
通讯作者：
Huaisheng Wang;Mingxiang Wang;Zhenyu Yang;Han Hao;M. Wong
中科院分区：
文献类型：
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作者：
Huaisheng Wang;Mingxiang Wang;Zhenyu Yang;Han Hao;M. Wong
系统地研究了n型金属诱导的横向结晶多晶硅薄膜晶体管在不同应力功率下的自热降解。研究了初始阶段具有周转效应的两阶段退化行为。初始降解阶段与弱Si-H键断裂有关。释放出的氢离子的浮体效应是初始应力过程中传递曲线发生后移的主要原因。另一方面，正常的降解阶段发生在晶界（GBs）和栅极氧化物/沟道界面上的强Si-Si键断裂和陷阱生成。我们的模型得到了与两个降解阶段相关的不同活化能的观察和在正常降解过程中GB陷阱密度持续增加的直接观察的支持。此外，在正常退化阶段，首次观察到异常的场效应迁移率随其$V_{g}$依赖位移而增加。澄清了这种行为并不是真正的通道迁移率增加，而是与应力相关的圈闭产生的结果。
Self-heating degradation of n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors is systematically investigated under various stress powers. A two-stage degradation behavior with turnaround effect at the initial stage is characterized. The initial degradation stage is related to breaking of weak Si–H bonds. The floating-body effect by released hydrogen ions is responsible for the observed backshift of the transfer curve during the initial stress. On the other hand, the normal degradation stage occurs by breaking of strong Si–Si bonds and trap generation at grain boundaries (GBs) and the gate oxide/channel interface. Our model is supported by observed different activation energies related to two degradation stages and a direct observation of the continuous increase in GB trap density during the normal degradation. Furthermore, during the normal degradation stage, an anomalous continuous field-effect mobility increase along with its $V_{g}$ dependence shift is first observed. It is clarified that this behavior is not a true channel mobility increase, but a consequence of stress-related trap generation.