Prototyping and Characterization of 1.2KV SIC Schottky Diodes for TWTA Application: The Challenge to Meet the User Specification
Prototyping and Characterization of 1.2KV SIC Schottky Diodes for TWTA Application: The Challenge to Meet the User Specification
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用于 TWTA 应用的 1.2KV SIC 肖特基二极管的原型设计和表征：满足用户规范的挑战
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
J. Bevan
中科院分区：
文献类型：
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作者：
E. Maset;E. Sanchis;S. Massetti;J. Montserrat;P. Godignon;J. Moreno;E. Cordero;J. Bevan
基于碳化硅基材的主要特性(高能隙、高电场击穿以及合理的高电子迁移率和高热导率3倍于硅)所带来的优势，使其在电源应用方面具有以下预期且在某些情况下已经得到验证的能力：低导通电压(导通电阻x栅极电荷总量比硅低100到200倍)、低泄漏电流(比硅器件低一个数量级)、低恢复电荷、快速通断、高阻挡电压(&gT；2 KV)、高功率密度[1-2]。在300°C以上也证明了更高的可靠工作结温度[3-4]。
Benefits based on the main features of SiC base material (high energy gap, high electric field breakdown in combination with reasonably high electron mobility and high thermal conductivity 3 times higher than Si -) led to the following expected and in some cases already proven capabilities for power application: low on-state voltage (100 to 200 times lower on resistance x total gate charge with respect to Si), low leakage currents (order of magnitude lower than in Si devices), low recovery charge, fast turn-on and turn-off, high blocking voltage (> 2 KV), high power density [1-2]. Higher reliable operating junction temperature have been also demonstrated above 300°C [3-4].