Electrical Property of DNA Field-Effect Transistor: Charge Retention Property
Electrical Property of DNA Field-Effect Transistor: Charge Retention Property
复制标题
DNA场效应晶体管的电特性：电荷保持特性
DOI：
10.1143/jjap.51.04dd13
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发表时间：
2012
影响因子：
1.5
通讯作者：
S. Yokoyama
中科院分区：
文献类型：
--
作者：
N. Matsuo;S. Takagi;K. Yamana;A. Heya;T. Takada;S. Yokoyama
我们发现了Si栅极/SiO2/DNA通道结构的场效应晶体管（FET）的电荷保留特性。硅源和漏极的DNA场效应管表现为空穴导通，漏极电流由栅极电压控制。此外，在漏极电流-漏极电压（Id-Vd）特性中观察到类似空间变化限制电流（SCLCs）和滞后电流的实验结果表明，在DNA的陷阱位点捕获的负电荷增强了空穴电流。此外，漏极电流随着测量重复次数的增加而增加。然而，通过在每次测量之间插入-50 V栅极电压应用的刷新过程，抑制了电流的增加。这一现象表明，电子的陷阱和脱陷阱过程发生在DNA通道中，这取决于栅极电压的施加。并对电荷保留机理进行了讨论。
We discovered the charge retention property of the field-effect transistor (FET) in a Si gate/SiO2/DNA channel structure. The DNA FET with the Si source and drain showed hole conduction, and the drain current was controlled by the gate voltage application. In addition, the experimental results that currents similar to the space change limited currents (SCLCs) and hysteresis were observed in the drain current–drain voltage (Id–Vd) characteristics indicate that the negative charges captured at the trap sites in the DNA enhance the hole currents. Also, the drain currents increased as the repetition number of the measurement increased. However, by inserting the refresh process of gate voltage application of -50 V between each measurement, the current increase was restrained. This phenomenon indicates that the trap and detrap process of electrons occurs in the DNA channel depending on the gate voltage application. The charge retention mechanism was also discussed.