Quantitative and high spatial resolution d33 measurement of piezoelectric bulk and thin films
Quantitative and high spatial resolution d33 measurement of piezoelectric bulk and thin films
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压电体和薄膜的定量和高空间分辨率 d33 测量
DOI：
10.1063/1.4935140
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发表时间：
2015
影响因子：
3.2
通讯作者：
S. Trolier
中科院分区：
文献类型：
--
作者：
S. Shetty;J. Yang;J. Stitt;S. Trolier
研制了一种基于改进的米劳探测方案的单光束激光干涉仪，其垂直分辨率为∼5 PM，用于图案化压电薄膜D33的局域化测量。该工具提供高空间分辨率(∼2 μm)，对于了解压电材料的比例和加工效果至关重要。这种方法能够提供关于D33的定量信息，目前在诸如压电响应力显微镜等局部测量技术中是困难的。该干涉仪内置在定制的显微镜中，并采用相位锁定技术来检测亚埃位移。用双光束激光干涉仪对0.67PbMg0.33Nb0.6703-0.33PbTiO_3单晶和块体PbZrTiO_3-5A陶瓷进行了D33测量，测量结果与激光干涉仪的测量结果在~lt；3%以内吻合。当电极直径小于100 μm时，在硅衬底上生长的PbZr0.52Ti0.48O3薄膜中观察到的衬底弯曲对面外应变的贡献被减小。
A single beam laser interferometer based on a modified Mirau detection scheme with a vertical resolution of ∼5 pm was developed for localized d33 measurements on patterned piezoelectric films. The tool provides high spatial resolution (∼2 μm), essential for understanding scaling and processing effects in piezoelectric materials. This approach enables quantitative information on d33, currently difficult in local measurement techniques such as piezoresponse force microscopy. The interferometer is built in a custom microscope and employs a phase lock-in technique in order to detect sub-Angstrom displacements. d33 measurements on single crystal 0.67PbMg0.33Nb0.67O3-0.33PbTiO3 and bulk PbZrTiO3-5A ceramics demonstrated agreement within <3% with measurements using a double beam laser interferometer. Substrate bending contributions to out-of-plane strain, observed in thin continuous PbZr0.52Ti0.48O3 films grown on Si substrates is reduced for electrode diameters smaller than 100 μm. Direct scanning across room t...