Semimetal-semiconductor transition in Bi1-xSbx alloy nanowires and their thermoelectric properties
Semimetal-semiconductor transition in Bi1-xSbx alloy nanowires and their thermoelectric properties
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DOI：
10.1063/1.1503873
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发表时间：
2002-09-23
影响因子：
4
通讯作者：
Dresselhaus, MS
中科院分区：
文献类型：
--
作者：
Lin, YM;Rabin, O;Dresselhaus, MS
Bi 1-xSbx纳米线阵列的电阻率表现出复杂的变化作为Sb含量x和温度T的函数，由于独特的半金属到半导体（SM-SC）的过渡所经历的纳米线。塞贝克系数的测量结果表明，由于锑合金化和减少线直径增强的热电势。理论模型不仅解释了这些传输测量，而且还提出了一种有用的技术，以实验确定（i）导线是半金属还是半导体，（ii）载流子浓度，以及（iii）SM-SC转变的条件。(C)2002年美国物理学会。
The resistivity of Bi1-xSbx nanowire arrays exhibits complex variations as a function of Sb content x and temperature T due to the unique semimetal-to-semiconductor (SM-SC) transition experienced by the nanowires. Seebeck coefficient measurements show enhanced thermopower due to Sb alloying and the reduction in wire diameter. The theoretical model not only explains these transport measurements, but also suggests a useful technique to experimentally determine (i) whether the wire is semimetallic or semiconducting, (ii) the carrier concentration, and (iii) the conditions for the SM-SC transition. (C) 2002 American Institute of Physics.