A Compact Resistive Quadrature Low Noise Ka-Band VCO SiGe HBT MMIC
A Compact Resistive Quadrature Low Noise Ka-Band VCO SiGe HBT MMIC
复制标题
紧凑型电阻式正交低噪声 Ka 波段 VCO SiGe HBT MMIC
DOI：
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
I. Kallfass
中科院分区：
文献类型：
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作者：
A. Dyskin;S. Wagner;I. Kallfass
本文报道了一种紧凑型阻性I/Q低噪声Ka波段压控振荡器。该振荡器由两个发射极耦合逻辑高频逆变器和一个用于振荡频率控制的电压-电流转换器组成。该振荡器提供差动I/Q输出，以便将来与次谐波下变频混频器集成。该振荡器的增益为4.31 GHz/V，在1 MHz频偏下的相位噪声为-75dBc/MHz。对于不同的调谐电压，振荡器在4V电源下的功耗在117到148 mW之间。该振荡器采用高频设计方法设计，然后针对低噪声操作进行了优化。
A compact resistive I/Q low noise Ka-band voltage-controlled oscillator is reported in this paper. The oscillator consists of two emitter-coupled logic based high-frequency inverters and a voltage-to-current converter for the oscillation frequency control. The oscillator provides differential I/Q outputs for future integration with a sub-harmonic down-conversion mixer. The oscillator demonstrates a gain of 4.31 GHz/V with a phase noise of -75 dBc/MHz at 1 MHz offset over the oscillation bandwidth. The oscillator consumes between 117 to 148 mW from a 4V supply for different tuning voltages. The oscillator was designed using a high-frequency design methodology and was then optimized for a low-noise operation.