High dielectric tunability in ferroelectric-paraelectric bilayers and multilayer superlattices
High dielectric tunability in ferroelectric-paraelectric bilayers and multilayer superlattices
复制标题
DOI：
10.1063/1.2189909
复制
发表时间：
2006-03
影响因子：
4
通讯作者：
S. Zhong;S. Alpay;J. Mantese
中科院分区：
文献类型：
--
作者：
S. Zhong;S. Alpay;J. Mantese
从理论上研究了铁电/顺电双层和多层超晶格的介电调谐特性。对赝象的（001）SrTiO_3上的（001）BaTiO_3 ~（3+）SrTiO_3异质外延双层膜和无应力的BaTiO_3 ~（3+）SrTiO_3双层膜进行了数值分析。我们表明，这些结构是能够大于90%，由于层之间的静电和机电耦合的可调谐性。此外，我们开发的方法，将传统的集成电路硅外延到异质外延结构，可以减少电流泄漏，同时保持高的可调谐性，从而使微波和毫米波元件的优化设备设计师的灵活性。
The dielectric tunability of ferroelectric/paraelectric bilayers and multilayer superlattices are examined theoretically. A numerical analysis is carried out for a pseudomorphic (001) BaTiO3∕SrTiO3 heteroepitaxial bilayer on (001) SrTiO3 and a stress-free BaTiO3∕SrTiO3 bilayer. We show that these structures are capable of tunabilities greater than 90% due to electrostatic and electromechanical coupling between layers. Moreover, we develop the methodology for incorporation conventional integrated circuit silicon dielectrics into heteroepitaxial structures that can reduce current leakage while maintaining high tunability, thereby enabling the device designer flexibility toward the optimization of microwave and millimeter wave elements.