Microcrystalline-Silicon Solar Cells With Photonic Crystals on the Top Surface
Microcrystalline-Silicon Solar Cells With Photonic Crystals on the Top Surface
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DOI：
10.1109/jphotov.2017.2695524
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发表时间：
2017-07-01
影响因子：
3
通讯作者：
Noda, Susumu
中科院分区：
文献类型：
--
作者：
Ishizaki, Kenji;Motohira, Akito;Noda, Susumu
我们首次研究了上表面具有光子晶体的微晶硅（μ c-Si）太阳能电池，它利用光子晶体中的大面积共振效应来增强光吸收。讨论了表面光子晶体的设计准则，指出了斜向泄漏损耗抑制的重要性。直接表面蚀刻的本征μ C-Si层（或光伏层）的影响进行了研究，它表明，非晶和结晶成分的μ C-Si层的不平衡蚀刻恶化的电子性能，特别是开路电压和填充因子。然后，我们在适当的蚀刻条件下引入光子晶体，并确认通过改善入射光与谐振模的耦合，成功地增强了光吸收（或外量子效率）。最后，我们制作了一个几微米厚的μ c-Si太阳能电池的顶面上的光子晶体，并证明了11%的有效面积效率，从短路电流密度的增强，同时抑制开路电压和填充因子的恶化。所获得的效率是最高的一类μ c-Si太阳能电池，其中所有的n/i/p层由硅组成，不包括宽禁带材料，如氧化硅。
We investigate microcrystalline-silicon (mu c-Si) solar cells with photonic crystals on the top surface, which exploit the large-area resonant effect in photonic crystals to enhance light absorption, for the first time. Guidelines for designing the surface photonic crystals are discussed, showing the importance of oblique leakage loss suppression. The influence of direct surface etching of the intrinsic mu c-Si layer (or photovoltaic layer) is studied, and it is shown that unbalanced etching of the amorphous and crystalline components of the mu c-Si layer deteriorates the electronic performance, in particular, the open-circuit voltage and fill factor. We then introduce photonic crystals under an adequate etching condition, and confirm that the light absorption (or the external quantum efficiency) is successfully enhanced by improving the incident light coupling to the resonant modes. Finally, we fabricate a few-micrometer-thick mu c-Si solar cell with a photonic crystal on the top surface and demonstrate an active-area efficiency of 11%, resulting from enhancement of the short-circuit current density, while simultaneously suppressing the deterioration of open-circuit voltage and fill factor. The obtained efficiency is the highest reported for a category of mu c-Si solar-cell in which all the n/i/p layers are composed of Si, excluding wide-gap materials such as silicon oxide.