Synchrotron microbeam x-ray radiation damage in semiconductor layers
Synchrotron microbeam x-ray radiation damage in semiconductor layers
复制标题
半导体层中的同步加速器微束 X 射线辐射损伤
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
Z. Cai
中科院分区：
文献类型：
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作者：
S. Polvino;C. Murray;Özgür Kalenci;I. C. Noyan;B. Lai;Z. Cai
用直径约为250nm的单色（11.2keV）X射线微束辐照绝缘体上硅（SOI）和SOI上硅锗（SiGe）样品，观察到了辐照引起的结构损伤。来自辐照层的X射线衍射峰随时间不可逆地降解，表明对晶格的永久性结构损伤。损伤区域的尺寸几乎比光束尺寸大一个数量级。损伤的程度随着远离被照射体积的中心而减小。我们讨论了所需的阈值剂量的损伤启动和可能的机制所观察到的损害。
Radiation induced structural damage is observed in silicon-on-insulator (SOI) and SiGe on SOI samples illuminated with monochromatic (11.2keV) x-ray microbeams approximately 250nm in diameter. The x-ray diffraction peaks from the irradiated layers irreversibly degrade with time, indicating permanent structural damage to the crystal lattice. The size of the damaged regions is almost an order of magnitude larger than the beam size. The magnitude of damage decreases as one moves away from the center of the illuminated volume. We discuss the threshold dosage required for damage initiation and possible mechanisms for the observed damage.