Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping
Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping
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DOI：
10.1063/1.5050700
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发表时间：
2019-01-21
影响因子：
3.2
通讯作者：
Markeev, Andrey M.
中科院分区：
文献类型：
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作者：
Kozodaev, Maxim G.;Chernikova, Anna G.;Markeev, Andrey M.
研究了处理温度不超过400 ℃的La掺杂HfO 2-ZrO 2薄膜的晶体结构和电响应，其中La掺杂浓度从0变化到摩尔分数。%.薄膜的结构和相关性能随La浓度的微小变化而敏感地变化。摩尔%，这是伴随着介电常数的显着增加。发现La掺杂在抑制单斜相形成和降低漏电流方面是非常有效的。值得注意的是，高矫顽场，这是在该材料系统中的最重要的问题之一，可以降低了类似于35%，在最有前途的La浓度为0.7摩尔。%.其结果是，能够确保10（11）个循环的高的场循环耐久性，同时保持高的剩余极化值（>= 25 μ/C/cm（2））。这是作者所知的这一领域中最好的结果之一。由AIP Publishing授权出版。
The crystalline structure and electrical response of La-doped HfO2-ZrO2 thin films of which processing temperature did not exceed 400 degrees C were examined, where the La-doping concentration was varied from zero to mol. %. The film structure and associated properties were found to vary sensitively with the minute variation in the La-concentration, where the ferroelectric response at low La-concentration (approximate to 1. mol. %, which was accompanied by a significant increase in dielectric permittivity. La-doping was found to be very effective in inhibiting the monoclinic phase formation and in decreasing the leakage current. Notably, the high coercive field, which was one of the most significant problems in this material system, could be decreased by similar to 35% at the most promising La-concentration of 0.7 mol. %. As a result, a highly promising field cycling endurance up to 10(11) cycles could be secured while maintaining a high remnant polarization value (>= 25 mu/C/cm(2)). This is one of the best results in this field of the authors' knowledge. Published under license by AIP Publishing.