Control of inhomogeneity and magnetic properties of ZnO:Co films grown by magnetron sputtering using nitrogen
Control of inhomogeneity and magnetic properties of ZnO:Co films grown by magnetron sputtering using nitrogen
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DOI：
10.1016/j.mssp.2023.107503
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发表时间：
2023
影响因子：
4.1
通讯作者：
M.N. Agusutrisno;Ryota Narishige;K. Kamataki;T. Okumura;N. Itagaki;K. Koga;M. Shiratani;Naoto Yamashita
中科院分区：
文献类型：
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作者：
M.N. Agusutrisno;Ryota Narishige;K. Kamataki;T. Okumura;N. Itagaki;K. Koga;M. Shiratani;Naoto Yamashita
我们实验报告的Co掺杂ZnO薄膜的结构不均匀性和磁性能的控制使用氮介导的结晶。ZnO：CoN在室温下通过使用氮气的RF磁控溅射在硅衬底上生长，然后在空气中在400 °C、600 °C、800 °C和1000 °C下进行后退火处理3小时。这种方法引起的变化，包括每个膜的微观结构和化学计量，这是由X射线衍射，热脱附，和X射线荧光测量证实的不均匀性。非均匀性的差异导致了磁性能的转变。在400 °C下退火的薄膜表现出最高的不均匀性，表现出超顺磁性-铁磁性。相比之下，所有其他薄膜表现出抗磁性。将后退火温度提高到400 °C以上减少了不均匀性，这由改善的晶粒尺寸、减少的杂质以及ZnO：CoN膜的晶格参数和化学计量接近纯ZnO的那些来指示。我们的研究结果将有助于控制ZnO：Co薄膜的非均匀性，以提高其室温磁性能。
We experimentally report the control of structural inhomogeneity and magnetic properties of Co-doped ZnO films using nitrogen mediated-crystallization. The ZnO:CoN were grown on a silicon substrate at room temperature by RF-magnetron sputtering using nitrogen and followed by a post-annealing treatment for 3 hours at 400 °C, 600 °C, 800 °C and 1000 °C in the air. This method induces changes in inhomogeneity properties comprised by microstructure and stoichiometry of each film, which are confirmed by X-ray diffraction, thermal desorption, and X-ray fluorescence measurements. The difference in inhomogeneity has led to the transformation in the magnetic properties. Films annealed at 400 °C, which showed the highest inhomogeneity, exhibited superparamagnetic-ferromagnetic properties. In contrast, all the other films exhibited diamagnetic properties. Increasing the post-annealing temperature above 400 °C reduces inhomogeneities indicated by improved grain size, decreased impurities, and lattice parameters and stoichiometry of ZnO:CoN films approached those of pure ZnO. Our present results will contribute to control the inhomogeneity of ZnO:Co films to improve magnetic properties at room temperature.