Variation of Seebeck Coefficient in Ultrathin Si Layer by Tuning Its Fermi Energy
Variation of Seebeck Coefficient in Ultrathin Si Layer by Tuning Its Fermi Energy
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通过调节费米能量改变超薄硅层中的塞贝克系数
DOI：
10.1109/qir.2013.6632534
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Hiroya Ikeda
中科院分区：
文献类型：
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作者：
Faiz Salleh;Yuhei Suzuki;Kazutoshi Miwa;Hiroya Ikeda
通过调整费米能量，我们改变了n型超薄绝缘体上硅（SOI）层的塞贝克系数。通过在SOI层中掺杂P原子和在SOI表面相对于P - si衬底施加外部偏置注入载流子来调节费米能量。发现塞贝克系数随杂质浓度的增加而减小，在1× 1020cm−3左右出现峰值。从计算的态密度（DOS）来看，塞贝克系数的峰值可能是由于杂质带在导带边缘附近形成，从而破坏了低维DOS的尖锐特征。另一方面，Seebeck系数随外偏置的增加而增加，这与外偏置下SOI层载流子浓度的变化一致，并且发现费米能量可以在不受杂质带影响的情况下进行控制。
We have varied the Seebeck coefficient of n-type ultrathin Si-on-insulator (SOI) layer by tuning the Fermi energy. The Fermi energy was tuned by doping P atoms into the SOI layer and by injecting carriers by applying an external bias to the SOI surface with respect to the p-Si substrate. It was found that the Seebeck coefficient decreases with increasing the impurity concentration, with a peak around 1× 1020cm−3From the calculated density-of-states (DOS), it is considered that the peak in Seebeck coefficient is likely to be due to the formation of impurity band near the conduction-band edge, which will demolish the sharp features in low-dimensional DOS. On the other hand, the Seebeck coefficient is found to increase with increasing the external bias which is in agreement with the variation of carrier concentration in the SOI layer under external bias and it is found that the Fermi energy can be controlled without the influences of impurity band.