ECC design of a custom DRAM storage unit
ECC design of a custom DRAM storage unit
复制标题
定制 DRAM 存储单元的 ECC 设计
DOI：
10.1109/vtest.1993.313329
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
J. Peter
中科院分区：
文献类型：
--
作者：
J. Peter
将描述定制存储单元的体系结构和ECC（纠错码）实现，该定制存储单元由封装在4MB SIMM（单列直插式模块）上的4Mb DRAM构建并且由CMOS 1微米ASIC芯片组控制。还支持在16 MB SIMM上封装16 Mb DRAM芯片的升级。存储单元被设计成与运行在25 MHz的INTEL i486微处理器接口，并根据预期的DRAM芯片故障机制提供ECC的最佳校正能力。该存储单元用于IBM宣布的3746型900通信控制器。支持的最大DRAM空间为50 SIBs。<<ETX>>
The architecture and ECC (error correction code) implementation of a custom storage unit built with 4 Mb DRAMs packaged on 4 MB SIMM (single in line module) and controlled with a CMOS 1 micron ASIC chips set will be described. The upgrade with 16 Mb DRAMs chips packaged on 16 MB SIMM is also supported. The storage unit is designed to interface with an INTEL i486 microprocessor running at 25 MHz and to provide an optimum correction capability of the ECC based on expected DRAMs chip failures mechanisms. This storage unit is used in the 3746 model 900 Communication Controller announced by IBM. The maximum DRAM space supported is 50 SIMMs.<<ETX>>