Electric Field-Induced Strain of PbZrO3 Films
Electric Field-Induced Strain of PbZrO3 Films
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DOI：
10.1143/jjap.45.7258
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发表时间：
2006-09
影响因子：
1.5
通讯作者：
I. Kanno;Takashi Inoue;Takaaki Suzuki;H. Kotera;K. Wasa
中科院分区：
文献类型：
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作者：
I. Kanno;Takashi Inoue;Takaaki Suzuki;H. Kotera;K. Wasa
本文报道了射频溅射制备的反铁电(AFE)PbZrO_3(PZ)薄膜的电场感应应变。在(001)Pt/(001)MgO衬底上生长的PZ薄膜在垂直于AFE极轴方向的四方晶系中优先沿c轴取向。另一方面，在(111)Pt/Ti/Si衬底上生长的PZ薄膜具有随机取向，表现出明显的双P-E磁滞回线，代表了外加电场引起的AFE-Fe相变。通过对PZ/衬底单晶悬臂梁尖端位移的测量，估算了电场诱导的横向应变。在铂/钛/硅衬底上生长的PZ薄膜表现出明显的应变跃变，对应于AFE-FE相变，在-150kV/cm的电场下获得了最大的横向应变为5×10-5。
In this paper, we report an electric field-induced strain of antiferroelectric (AFE) PbZrO3 (PZ) films deposited by rf-sputtering. The PZ films grown on the (001)Pt/(001)MgO substrate are preferentially oriented along the c axis in a tetragonal system which is perpendicular to the AFE polar direction. On the other hand, the PZ films on the (111)Pt/Ti/Si substrate have a random orientation, and they show clear double P–E hysteresis loops, representing the AFE–ferroelectric (FE) phase transition caused by the application of an electric field. The transverse strain induced by the electric field is evaluated by the measurements of tip displacement of PZ/substrate unimorph cantilevers. The PZ films on the Pt/Ti/Si substrate exhibit clear strain jump corresponding to the AFE–FE phase transition, and a maximum transverse strain of 5×10-5 is obtained at an electric field of -150 kV/cm.