Simple route to interconnected, hierarchically structured, porous Zn2SnO4 nanospheres as electron transport layer for efficient perovskite solar cells
Simple route to interconnected, hierarchically structured, porous Zn2SnO4 nanospheres as electron transport layer for efficient perovskite solar cells
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DOI：
10.1016/j.nanoen.2020.104620
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发表时间：
2020-05
期刊：
影响因子：
17.6
通讯作者：
Meng Zhang;Xun Cui;Yufen Wang;B. Wang;M. Ye;Wenlong Wang;Chunyuan Ma;Zhiqun Lin
中科院分区：
文献类型：
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作者：
Meng Zhang;Xun Cui;Yufen Wang;B. Wang;M. Ye;Wenlong Wang;Chunyuan Ma;Zhiqun Lin
构建具有较高载流子迁移率和合适带隙的电子传输层（ETL）至关重要，因为它极大地影响钙钛矿太阳能电池（PSC）的光伏性能。 Zn2SnO4(ZTO) 具有 10–30 cm2V−1s−1 的高电子迁移率，比 PSC 中广泛使用的 TiO2ETL 高一个数量级，使其成为 TiO2ETL 的绝佳替代品。在此，我们报告了一种简单而强大的聚合物模板路线，用于互连、分层结构、多孔 ZTO 纳米球，作为高性能有机铅卤化物 PSC 的有效 ETL。多孔 ZTO 纳米球 ETL 由 4.5 nm ZTO 纳米颗粒组装在具有 80-100 nm 空腔的多孔纳米球表面组成，可显着改善光吸收，增强电子提取，促进电荷传输，并抑制所得 PSC 中的载流子复合，其功率转换效率 (PCE) 为 17.14%，大大提高了 PSC 的性能。 优于基于 ZTO 纳米颗粒的器件（14.02%；即没有孔隙率）。因此，制造具有高载流子迁移率的多孔且分层结构的半导体的策略可能会开辟一条途径，以创建强大的ETL，进而为高性能光电子学创建空穴传输层（HTL）。
Constructing electron transport layer (ETL) with higher carrier mobility and suitable bandgap is of key importance as it greatly influences the photovoltaic performance of perovskite solar cells (PSCs). Zn2SnO4(ZTO) carries a high electron mobility of 10–30 cm2V−1s−1, an order of magnitude over the widely used TiO2ETL in PSCs, rendering it an excellent alternative to TiO2ETL. Herein, we report a simple yet robust polymer-templating route to interconnected, hierarchically structured, porous ZTO nanospheres as an efficient ETL for high-performance organolead halide PSCs. The porous ZTO nanospheres ETL, composed of an assembly of 4.5-nm ZTO nanoparticles on the surface of porous nanosphere possessing 80–100 nm cavity, renders markedly improved light absorption, enhanced electron extraction, facilitated charger transportation, and suppressed carrier recombination in the resulting PSCs, which exhibit a power conversion efficiency (PCE) of 17.14%, greatly outperforming the device based on the ZTO nanoparticles (14.02%; i.e., without porosity). As such, the strategy for crafting porous yet hierarchically structured semiconductors with high carrier mobility may open up an avenue to create robust ETL, and by extension, hole transport layer (HTL) for high-performance optoelectronics.