Electric properties of RF-MBE InGaAsN grown layer
Electric properties of RF-MBE InGaAsN grown layer
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RF-MBE InGaAsN 生长层的电特性
DOI：
10.1002/pssc.200303560
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
A. Hashimoto
中科院分区：
文献类型：
--
作者：
T. Suzuki;T. Yamaguchi;A. Yamamoto;A. Hashimoto
我们研究了GaAs N和InGaAsN的霍尔电子迁移率随温度的变化。GaAsN系统的电子迁移率的温度依赖性不能解释合金和电离杂质散射机制，和实验数据表明，未知的散射机制可能是由N的掺入。另一方面，InGaAsN系统的温度依赖性表明，与GaAsN系统的情况相比，电子迁移率在低温范围内提高。此外，由N掺入引起的迁移率的劣化被In掺入抑制，并且合金散射成为InGaAsN系统中的散射机制的主导。结果表明，N掺入引起的GaAsN系统的散射起源可能与N分布的不均匀性有关，而In掺入可以抑制N分布的不均匀性。（© 2003 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We have investigated the Hall electron mobility of GaAsN and the InGaAsN as a function of temperature. The temperature dependence of the electron mobility for the GaAsN system cannot be explained by the alloy and the ionized impurity scattering mechanisms, and the experimental data indicate that unknown scattering mechanisms may be induced by the N incorporation. On the other hand, the temperature dependence for the InGaAsN system shows that the electron mobility improves in the low temperature range in contrast to the case of the GaAsN system. Moreover, the degradation of the mobility induced by the N incorporation is suppressed by the In incorporation, and the alloy scattering becomes dominant as the scattering mechanism in the InGaAsN system. The results strongly suggest that the scattering origin induced by the N incorporation for the GaAsN system may be related with the inhomogeneous N distribution and that the inhomogeneity may be suppressed by the In incorporation. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)