Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions
Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions
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DOI：
10.1016/j.tsf.2009.09.179
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发表时间：
2010-02
期刊：
影响因子：
2.1
通讯作者：
Hai-gui Yang;Dong Wang;H. Nakashima;K. Hirayama;Satoshi Kojima;Shogo Ikeura
中科院分区：
文献类型：
--
作者：
Hai-gui Yang;Dong Wang;H. Nakashima;K. Hirayama;Satoshi Kojima;Shogo Ikeura
