Conductivity Modulation by CaVO3-based All-solid-state Redox Transistor with Ion Transport of Li+ or H+
Conductivity Modulation by CaVO3-based All-solid-state Redox Transistor with Ion Transport of Li+ or H+
复制标题
通过 Li 或 H 离子传输的 CaVO3 基全固态氧化还原晶体管进行电导率调制
DOI：
10.14723/tmrsj.44.57
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
K. Terabe
中科院分区：
文献类型：
--
作者：
M. Takayanagi;M. Takayanagi;T. Tsuchiya;W. Namiki;W. Namiki;Y. Kitagawa;Y. Kitagawa;D. Etoh;D. Etoh;D. Nishioka;D. Nishioka;Tsunetomo Yamada;T. Higuchi;K. Terabe
制备了以YSZ为H +离子导体的CaVO 3（CVO）基全固态氧化还原晶体管.的CVO的电子电导率调制通过控制氧的非化学计量，由于H +的插入和遗弃（氧化还原反应）。漏电流的变化大于SrVO 3（SVO）基全固态氧化还原晶体管。作为对比，还研究了以Li 2 O-ZrO 2 -SiO2（LZSO）Li +为导体的CVO基器件. LZSO器件的漏极电流比SVO器件的漏极电流有较大的提高。控制氧的非化学计量由于氧化还原反应（H +或Li +的插入和遗弃）被发现是有效的调制CVO的电子电导率。
CaVO 3 (CVO)-based all-solid-state redox transistor with a Yttria-stabilized-ZrO 2 (YSZ) H + ion conductor was fabricated. The electronic conductivity of the CVO was modulated by controlling oxygen nonstoichiometry due to H + insertion and desertion (redox reaction). The variation in drain current was larger than that of SrVO 3 (SVO)-based all-solid-state redox transistor. For comparison, the CVO-based device with a Li 2 O-ZrO 2 -SiO 2 (LZSO) Li + conductor was also investigated. The LZSO device also showed larger drain current enhancement than the SVO device. Controlling oxygen nonstoichiometry due to the redox reaction (H + or Li + insertion and desertion) is found to be effective for modulating electronic conductivity of CVO.