Direct measurements of large near-band edge nonlinear index change from 1.48 to 1.55 μm in InGaAs/InAlGaAs multiquantum wells
Direct measurements of large near-band edge nonlinear index change from 1.48 to 1.55 μm in InGaAs/InAlGaAs multiquantum wells
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直接测量 InGaAs/InAlGaAs 多量子阱中从 1.48 到 1.55 μm 的大近带边缘非线性折射率变化
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
M. Extavour
中科院分区：
文献类型：
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作者：
L. Brzozowski;E. Sargent;A. Thorpe;M. Extavour
报道了In0.530Al0.141Ga0.329As/In0.530Ga0.470As多量子阱在1480-1550 nm范围内非线性折射率变化和非线性吸收的直接皮秒测量结果。发现了较大的低阈值非线性指数变化：在注量为116cm2时，Δ_n高达0.14，优值系数为1.38。当注量为116cm2时， μ_n达到0.14，优值系数为1.38。折射率转换吸收优值系数F在大部分光谱范围内大于1，这表明所研究的材料在非线性开关器件中的应用前景。
Direct picosecond measurements of nonlinear refractive index change and nonlinear absorption in In0.530Al0.141Ga0.329As/In0.530Ga0.470As multiquantum wells in the range 1480–1550 nm are reported. Large low-threshold nonlinear index changes are found: Δn of up to 0.14 with figure of merit of 1.38 at a fluence of 116 μJ/cm2. The index-change-over-absorption figure of merit, F, is greater than unity over much of the spectrum, pointing to the prospective applicability of the materials studied to nonlinear switching devices.