Formation and optical properties of GaSb quantum dots epitaxially grown on Si substrates using an ultrathin SiO2 film technique
Formation and optical properties of GaSb quantum dots epitaxially grown on Si substrates using an ultrathin SiO2 film technique
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DOI：
10.1063/1.3055211
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发表时间：
2009-01
影响因子：
3.2
通讯作者：
Y. Nakamura;T. Sugimoto;M. Ichikawa
中科院分区：
文献类型：
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作者：
Y. Nakamura;T. Sugimoto;M. Ichikawa
我们开发了一种使用含有外延Ge核的超薄SiO2膜在Si衬底上形成外延GaSb量子点的技术。与Si上的Volmer-Weber型GaSb量子点不同，点密度更高（109-1012 cm-2），并且点尺寸被控制在约10-100 nm的范围内。量子点的成核是通过在Ge核上捕获Ga原子而引发的。在5 K下的光致发光谱测量揭示了GaSb量子点中的量子限制效应，当量子点的基长从100 nm减小到17 nm时，导致光致发光谱峰从0.76 eV连续蓝移约30 meV。
We developed a technique for forming epitaxial GaSb quantum dots on Si substrates using ultrathin SiO2 films that contain epitaxial Ge nuclei. Unlike Volmer–Weber-type GaSb quantum dots on Si, the dot density was higher (109–1012 cm−2) and the dot size was controlled in the range of approximately 10–100 nm. The nucleation of quantum dots was initiated by trapping Ga atoms on the Ge nuclei. Photoluminescence spectroscopy measurement at 5 K revealed the quantum-confinement effect in GaSb dots causing the photoluminescence peak to be continuously blueshifted from 0.76 eV by ∼30 meV when the base length of the dots decreases from 100 to 17 nm.