Influence of power semiconductor on-voltage on iron loss of inverter-fed
Influence of power semiconductor on-voltage on iron loss of inverter-fed
复制标题
功率半导体导通电压对逆变供电铁损的影响
DOI：
10.1109/peds.2013.6527134
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
K. Fujisaki
中科院分区：
文献类型：
--
作者：
D. Kyamoari;K. Fujisaki
通过实验数据，明确了功率半导体导通电压对逆变供电电工钢铁损的影响。单相全桥逆变器用于铁损评估，其中双极晶体管，MOSFET（金属氧化物半导体场效应晶体管）和IGBT（绝缘栅双极晶体管）在逆变电路中被选择作为功率半导体。当电工钢中最大磁通密度调整为1 [T]时，所测铁损与三种功率半导体不同。
The influence of power semiconductor on-voltage on iron loss of inverter-fed electrical steels is made clear through the experimental data. One-phase full bridge inverter is used for an iron loss evaluation, where Bipolar transistor, MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are selected as power semiconductors in an inverter circuit. When maximum magnetic flux density is adjusted to be 1 [T] in the electrical steel, the measured iron loss is different from the three kinds of power semiconductors.