Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC
Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC
复制标题
重铝掺杂 4H-SiC 与重铝氮共掺杂 4H-SiC 的导电机制比较
DOI：
10.4028/www.scientific.net/msf.924.188
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
H. Okumura
中科院分区：
文献类型：
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作者：
Hideharu Matsuura;Akinobu Takeshita;T. Imamura;Kota Takano;Kazuya Okuda;Atsuki Hidaka;S. Ji;K. Eto;K. Kojima;Tomohisa Kato;S. Yoshida;H. Okumura
研究了重掺Al和重掺Al、N共掺p型4 H-SiC外延层的导电机制。在Al浓度（CAl）在4 × 1019和2 × 1020 cm-3之间的单掺杂和共掺杂样品中，带和最近邻跳跃（NNH）电导分别出现在高温和低温范围内。N施主的共掺杂使得NNH传导在高于单掺杂样品的温度下占主导地位。在CAl在1 × 1019和4 × 1019 cm-3之间的单掺杂和共掺杂样品中，在能带和NNH导电区域之间出现了意想不到的导电。
The conduction mechanism in heavily Al-doped or heavily Al-and N-codoped p-type 4H-SiC epilayers was investigated. In both the singly-doped and codoped samples with an Al concentration (CAl) between 4x1019 and 2x1020 cm-3, band and nearest-neighbor hopping (NNH) conductions appeared in high and low temperature ranges, respectively. The codoping of N donors makes the NNH conduction dominant at temperatures higher than in the singly-doped samples. In both the singly-doped and codoped samples with CAl between 1x1019 and 4x1019 cm-3, an unexpected conduction appeared between the regions of the band and NNH conductions.