Microwave Generation in Synchronized Semiconductor Superlattices
Microwave Generation in Synchronized Semiconductor Superlattices
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DOI：
10.1103/physrevapplied.7.044024
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发表时间：
2017-04-27
影响因子：
4.6
通讯作者：
Balanov, A. G.
中科院分区：
文献类型：
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作者：
Gaifullin, M. B.;Alexeeva, N. V.;Balanov, A. G.
我们研究了在同一掺杂衬底上制备的电磁耦合半导体超晶格系统中的高频产生。对单个超晶格施加偏置电压会产生高频电流振荡。我们证明了在一定的外加电压范围内，超晶格内部的电流振荡是自同步的，这导致产生的微波功率急剧上升。这些结果与我们的数值模型很好地吻合，为高功率小型微波发生器的设计开辟了一条很有前途的实用途径。
We study high-frequency generation in a system of electromagnetically coupled semiconductor superlattices fabricated on the same doped substrate. Applying a bias voltage to a single superlattice generates high-frequency current oscillations. We demonstrate that within a certain range of the applied voltage, the current oscillations within the superlattices can be self-synchronized, which leads to a dramatic rise in the generated microwave power. These results, which are in good agreement with our numerical model, open a promising practical route towards the design of high-power miniature microwave generators.