Multimode Operation of Organic-Inorganic Hybrid Thin-Film Transistors Based on Solution-Processed Indium Oxide Films.
Multimode Operation of Organic-Inorganic Hybrid Thin-Film Transistors Based on Solution-Processed Indium Oxide Films.
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DOI：
10.1021/acsami.1c10982
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发表时间：
2021-09
影响因子：
9.5
通讯作者：
Tianyu Tang;Jakob Zessin;F. Talnack;K. Haase;K. Ortstein;Baiqiang Li;M. Löffler;B. Rellinghaus;M. Hambsch;S. Mannsfeld
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文献类型：
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作者：
Tianyu Tang;Jakob Zessin;F. Talnack;K. Haase;K. Ortstein;Baiqiang Li;M. Löffler;B. Rellinghaus;M. Hambsch;S. Mannsfeld
溶液处理的金属氧化物（MO）薄膜由于其高光学透明度、制造方法简单和高电子迁移率而被广泛研究用于薄膜晶体管（TFT）。在这里，我们报告，为第一次，改善的电子性能的溶液处理的氧化铟（InOx）膜的后续添加的有机p型半导体材料，这里的6，13-双（三异丙基甲硅烷基乙炔基）并五苯（TIPS-并五苯），产生有机-无机混合TFT。TIPS-并五苯的添加不仅通过增强电荷载流子渗透途径来提高电子迁移率，而且还提高了IDS（VG）特性的电子和时间稳定性，以及减少了InOx前体溶液所需的旋涂步骤的数量。非常有趣的是，在15 nm InOx层的顶部引入10 nm TIPS-并五苯膜允许在对制造工艺仅有最小改变的情况下制造增强型或耗尽型器件。具体地，我们发现，当TIPS-并五苯层被添加在源极/漏极电极的顶部上时，产生具有嵌入式源极/漏极电极的器件[嵌入式电极TFT（EETFT）]，该器件表现出平均迁移率（μ）为6.4cm2V-1 s-1、源极-漏极电流比（Ion/Ioff）为约105以及接近零的阈值电压（Vth）的增强模式行为。另一方面，当TIPS-并五苯层在源-漏电极之前添加时，即，在顶部接触电极TFT（TCETFT）中，观察到非常明显的耗尽模式行为，平均μ为6.3cm 2 V-1 s-1，Ion/Ioff比超过105，并且VTH为-80.3V。此外，结合增强（EETFT）和耗尽（TCETFT）模式晶体管制造逻辑反相器，其显示出用于构建有机-无机混合电子器件和电路的潜力。
Solution-processed metal oxide (MO) thin films have been extensively studied for use in thin-film transistors (TFTs) due to their high optical transparency, simplicity of fabrication methods, and high electron mobility. Here, we report, for the first time, the improvement of the electronic properties of solution-processed indium oxide (InOx) films by the subsequent addition of an organic p-type semiconductor material, here 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), yielding organic-inorganic hybrid TFTs. The addition of TIPS-pentacene not only improves the electron mobility by enhancing the charge carrier percolation pathways but also improves the electronic and temporal stability of the IDS(VG) characteristics as well as reduces the number of required spin-coating steps of the InOx precursor solution. Very interestingly, the introduction of 10 nm TIPS-pentacene films on top of 15 nm InOx layers allows the fabrication of either enhancement- or depletion-mode devices with only minimal changes to the fabrication process. Specifically, we find that when the TIPS-pentacene layer is added on top of the source/drain electrodes, resulting in devices with embedded source/drain electrodes [embedded electrode TFTs (EETFTs)], the devices exhibit an enhancement-mode behavior with an average mobility (μ) of 6.4 cm2 V-1 s-1, a source-drain current ratio (Ion/Ioff) of around 105, and a near-zero threshold voltage (VTH). When on the other hand the TIPS-pentacene layer is added before the source-drain electrodes, i.e., in top-contact electrode TFTs (TCETFTs), a very clear depletion mode behavior is observed with an average μ of 6.3 cm2 V-1 s-1, an Ion/Ioff ratio of over 105, and a VTH of -80.3 V. Furthermore, a logic inverter is fabricated combining the enhancement (EETFTs)- and depletion (TCETFTs)-mode transistors, which shows a potential for the construction of organic-inorganic hybrid electronics and circuits.