Crystallographic Structure of InAs Nanowires Studied by Transmission Electron Microscopy
Crystallographic Structure of InAs Nanowires Studied by Transmission Electron Microscopy
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DOI：
10.1143/jjap.46.l1102
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发表时间：
2007-11
影响因子：
1.5
通讯作者：
K. Tomioka;J. Motohisa;S. Hara;T. Fukui
中科院分区：
文献类型：
--
作者：
K. Tomioka;J. Motohisa;S. Hara;T. Fukui
用透射电子显微镜（TEM）研究了在（111）B取向衬底上用选择区域金属有机物气相外延生长的InAs纳米线的晶体结构。TEM图像显示纳米线沿生长方向沿着有许多层错。原子层堆叠的统计分析表明，InAs纳米线包含锌钛矿和纤锌矿晶相，其过渡发生在每一到三个单层。这种特殊的晶体相变导致了特殊的电子衍射图案。原子层的堆积与纳米线的直径没有明显的相关性。
Crystallographic structure of InAs nanowires, which were grown by selective-area metalorganic vapor phase epitaxy on (111)B-oriented substrates, was investigated by transmission electron microscopy (TEM). The TEM images showed that the nanowires had many stacking faults along the growth direction. Statistical analysis of the atomic-layer stacking showed that InAs nanowires contained both zincblende and wurtzite crystal phases, whose transition took place in every one to three monolayers. This specific crystal phase transition resulted in peculiar electron diffraction patterns. The stacking of the atomic layers had no distinct correlation with the diameter of the nanowires.