Grain Growth in Cu2ZnSnS4 Thin Films Using Sn Vapor Transport for Photovoltaic Applications
Grain Growth in Cu2ZnSnS4 Thin Films Using Sn Vapor Transport for Photovoltaic Applications
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DOI：
10.7567/apex.6.075503
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发表时间：
2013-07-01
影响因子：
2.3
通讯作者：
Tsutsumi, Yasuo
中科院分区：
文献类型：
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作者：
Toyama, Toshihiko;Konishi, Takafumi;Tsutsumi, Yasuo
研究了利用锡气相输运（TVT）生长的Cu2ZnSnS4薄膜。结构表征表明，晶粒尺寸等于或大于薄膜厚度（1 ~ 4 μ m），且明显大于无TVT生长情况下的晶粒尺寸（60 nm）。此外，未检测到相分离。光热衍射光谱分析表明，在亚隙区，光学吸收系数非常低，为7 × 10(1) cm(-1)，表明抑制了缺陷的形成。最后，利用tvt加工的薄膜作为太阳能电池的吸收剂，获得了6.9%的转换效率。(C) 2013日本应用物理学会
Cu2ZnSnS4 thin films containing grains grown using Sn vapor transport (TVT) were investigated. Structural characterization revealed that the grain sizes were equal to or larger than the film thickness (1-4 mu m) and significantly larger than those in the case of growth without TVT (60 nm). Furthermore, no phase separation was detected. Photothermal diffraction spectroscopy revealed that the optical absorption coefficient was very low in the subgap region, 7 x 10(1) cm(-1), suggesting the suppression of defect formation. Finally, a TVT-processed thin film was used as an absorber in a solar cell, and a conversion efficiency of 6.9% was achieved. (C) 2013 The Japan Society of Applied Physics