High-field cyclotron resonance and impurity transition in n-type and p-type 3C-SiC at magnetic fields up to 175 T.
High-field cyclotron resonance and impurity transition in n-type and p-type 3C-SiC at magnetic fields up to 175 T.
复制标题
在高达 175 T 的磁场下，n 型和 p 型 3C-SiC 中的高场回旋共振和杂质跃迁。
DOI：
10.1103/physrevb.48.10909
复制
发表时间：
1993
期刊：
影响因子：
--
通讯作者：
K. Ikoma
中科院分区：
文献类型：
--
作者：
J. Kono;Shojiro Takeyama;H. Yokoi;N. Miura;Mitsugu Yamanaka;M. Shinohara;K. Ikoma
利用单匝线圈技术产生的高达175 T的脉冲强磁场和光子能量高达73.2meV的H2O（D2 O）激光脉冲远红外辐射，对生长在Si（100）衬底上的3C-SiC薄膜进行了磁透射实验。在n型~ 3C-SiC中，在光子能量10.4-53.8 meV的宽范围内，观察到B kS的两个回旋共振峰，对应于X点处的轻质量谷和重质量谷，即：mt * =（0.2 5 ± 0.0 1）m0，（mt * ml *）1/2 =（0.4 1 ± 0.0 1）m0。这些值与Kaplan等人在低场条件下从CR获得的值一致
Magnetotransmission experiments have been carried out on 3C-SiC thin films grown on Si(100) substrates, using the combination of pulsed high magnetic fields up to 175 T generated by the single-turn coil technique and pulsed far-infrared radiations from a H 2 O (D 2 O) laser at photon energies up to 73.2 meV. In n-type 3C-SiC, tnuo cyclotron-resonance (CR) peaks have been observed for B∥k∥ over a wide range of photon energy 10.4-53.8 meV, corresponding to the light- and heavy-mass valleys at the X points, i.e., m t * =(0.25±0.01)m 0 and (m t * m l * ) 1/2 =(0.41±0.01)m 0 . These values are in agreement with those of Kaplan et al. obtained from CR at low fields