Epitaxial growth of MgO nanowires by pulsed laser deposition
Epitaxial growth of MgO nanowires by pulsed laser deposition
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DOI：
10.1063/1.2748625
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发表时间：
2007-06
影响因子：
3.2
通讯作者：
K. Nagashima;T. Yanagida;Hidekazu Tanaka;T. Kawai
中科院分区：
文献类型：
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作者：
K. Nagashima;T. Yanagida;Hidekazu Tanaka;T. Kawai
利用金催化剂辅助脉冲激光沉积(PLD)技术在氧化镁单晶衬底上外延生长了单晶氧化镁纳米线。适当控制Au催化剂的用量和衬底温度是催化剂辅助PLD生长氧化镁纳米线的关键。此外，在(100)、(110)和(111)取向的衬底上外延生长了(100)取向的氧化镁纳米线，允许有限的生长方向。讨论了氧化镁纳米线在PLD中可能的生长机制。PLD用于制备氧化镁纳米线的可行性将有助于通过原位构建氧化物纳米线中的异质结构，将各种过渡金属氧化物丰富的功能整合到纳米线中。
We fabricated single-crystalline MgO nanowires epitaxially grown on MgO single crystal substrate using the Au catalyst-assisted pulsed laser deposition (PLD). Controlling appropriately the amount of Au catalyst and the substrate temperature was found to be crucial for the MgO nanowire growth using the catalyst-assisted PLD. In addition, (100) oriented MgO nanowires were epitaxially grown on (100), (110), and (111) oriented substrates, allowing the limited growth directions. The possible growth mechanism of MgO nanowires in PLD is discussed. This feasibility of PLD for fabricating MgO nanowires would contribute to incorporating the rich functionalities of various transition metal oxides into nanowires via in situ construction of heterostructures in oxide nanowires.