High performance of NiO-Ag-NiO based semi-transparent perovskite solar cell
High performance of NiO-Ag-NiO based semi-transparent perovskite solar cell
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高性能NiO-Ag-NiO基半透明钙钛矿太阳能电池
DOI：
10.1016/j.matpr.2022.06.211
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发表时间：
2022
期刊：
影响因子：
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通讯作者：
Dhriti Sundar Ghosh
中科院分区：
文献类型：
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作者：
S. Rani;Arun Kumar;Dhriti Sundar Ghosh
在半透明钙钛矿太阳能电池（ST-PvSC）中，电荷传输层和透明电极（TE）的厚度和选择在决定器件的性能和透明度方面变得更加突出。在这项工作中，我们报告了NiO/Ag/NiO（NAN）作为ST-PvSC的顶部TE的潜力，其中甲基铵碘化铅（MAI）作为吸收材料。基于传输矩阵法（TMM）的光学模拟被用来优化NAN电极和整个器件。采用优化的NiO（37 nm）/Ag（9 nm）/NiO（34 nm）结构的NAN-TE，其平均可见光透过率（AVT）为86.60%。此外，大多数现有的工作集中于使用螺环-OMeO 2作为空穴传输材料（HTM），其具有差的稳定性并且昂贵。在我们的设备架构中，NiO满足能量水平的要求，探索作为一种替代spiro-OMeCl 2。在NAN-TE中，与钙钛矿层接触的底部NiO不仅用作有助于减少由于Ag层引起的反射损耗的层，而且还用作HTM。在这项工作中，我们还研究了不同的电子传输材料（ETM），如TiO 2，AZO和ZnO与NAN-TE相结合的性能。当用不同的ETM层模拟时，发现TiO 2是最好的。所报道的工作启发了NAN-TE的能力，使设备不仅是半透明的，但也在制作一个良好的界面与有源层从电气的角度来看。当器件结构中各层玻璃/ITO（100 nm）/TiO_2（40 nm）/NiO（100 nm）/NiO（37 nm）/Ag（9 nm）/NiO（34 nm）的最佳值为16.66 mA/cm ~ 2时，器件的平均电压阈值（AVT）为31.49%。此外，使用NiO作为HTM代替螺环-OMeV对装置的稳定性和成本具有更大的影响。
In semi-transparent perovskite solar cells (ST-PvSC), the thicknesses and choice of charge transport layers and transparent electrode (TE) becomes more prominent in determining the performance and transparency of the device. In this work, we report the potential of NiO/Ag/NiO (NAN) as a top TE for ST-PvSC with methylammonium lead iodide (MAPI) as an absorbing material. Optical simulation based on the transfer matrix method (TMM) is used to optimize the NAN electrode and the whole device. NAN-TE with optimized NiO (37 nm)/Ag(9 nm)/NiO(34 nm) structure gives an average visible transmittance (AVT) of 86.60%. In addition, most of the prior works focus on using spiro-OMeTAD as hole transporting material (HTM), which has poor stability and is expensive. In our device architecture, NiO satisfying the energy level requirement is explored as an alternative to spiro-OMeTAD. Here in NAN-TE, the bottom NiO in contact with the perovskite layer not only works as a layer that helps to reduce the reflection loss due to the Ag layer but also as an HTM. In this work, we also studied the performance of different electron transporting materials (ETM) like TiO2, AZO, and ZnO in combination with the NAN-TE. When simulated with different ETM layers, TiO2is found to be the best performing. The reported work enlightens the capability of NAN-TE for making devices not only semi-transparent but also in making a good interface with the active layer from the electrical point of view. Taking the optimized values of all layers in the device structure-Glass/ITO (100 nm)/TiO2(40 nm)/MAPI (100 nm)/NiO (37 nm)/Ag (9 nm)/NiO (34 nm) a JSCvalue of 16.66 mA/cm2and AVT of 31.49% for the device has been reported. Further, the use of NiO as HTM in place of spiro-OMeTAD has a greater impact on the stability and cost of the device.