A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
复制标题
InGaN金属有机气相外延生长的高温热力学模型
DOI：
10.1143/jjap.38.4958
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发表时间：
1999
影响因子：
1.5
通讯作者：
Wei
中科院分区：
文献类型：
--
作者：
J. Ou;Yung–Chung Pan;Wen;C. Shu;Heng–Ching Lin;M. Lee;Wen;C. Chiang;Horng Chang;Wei
对InxGa_（1-x）N合金的金属有机物气相外延（MOVPE）生长过程进行了热力学分析。因此，在各种输入In流速和生长温度下制备了一系列InGaN样品。理论结果表明，In固体浓度随In流量的增加和温度的降低而增加，而在较低的生长温度和较高的In流量下，金属液滴更容易在表面形成，这与我们的实验数据吻合得很好。
A thermodynamic analysis tailored with a high-temperature parameter was performed for metalorganic vapor phase epitaxial (MOVPE) growth of InxGa1-xN alloys. Accordingly, a series of InGaN samples were prepared under various input In flow rates and growth temperatures. Theoretical results indicate that the In solid concentration tends to increase with increasing In flow rate and with decreasing temperature, whereas the metal droplets form more easily on the surface at lower growth temperatures and higher In fluxes, which are in good agreement with our experimental data.