Demagnetizing and Stray Fields of Elliptical Films

Demagnetizing and Stray Fields of Elliptical Films
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椭圆薄膜的退磁和杂散场

DOI:
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发表时间:
1966
期刊:
影响因子:
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通讯作者:
J. Burns
J. Burns
中科院分区:
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文献类型:
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作者:
H. Chang;J. Burns

文献摘要

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铁磁薄膜内部和外部的静磁场,分别称为退磁场和杂散场,已知可以从均匀磁化的扁平椭球体模型计算。在本文中,这些字段被绘制为与纵横比B/a和c/a作为参数的空间坐标的函数。这些信息被应用于一些磁性薄膜器件和物理问题。去磁场影响壁运动阈值,形状各向异性和畴结构的稳定性。杂散场影响阵列中的存储器元件的蠕变和切换阈值。薄膜对中退磁场降低的有效性决定了驱动线的配置。在静磁耦合或交换力耦合的薄膜中,杂散场的平面分量在确定准静态和动态磁化反转方面都很重要。但杂散场的法向分量远小于退磁场的法向分量。
The magnetostatic fields inside and outside of a ferromagnetic thin film, called demagnetizing and stray fields, respectively, are known to be calculable from the model of a uniformly magnetized flat ellipsoid. In this paper, these fields are plotted as functions of the spatial coordinates with the aspect ratios b/a and c/a as parameters. The information is applied to a number of magnetic thin‐film device and physics problems.Demagnetizing fields influence wall motion threshold, shape anisotropy, and the stability of domain configuration. Stray fields affect the creeping and switching thresholds of memory elements in an array. The effectiveness of demagnetizing field reduction in a film pair dictates the drive line configuration. In films coupled magnetostatically or by exchange force, the planar components of stray field are important in determining both the quasistatic and dynamic magnetization reversals. However, the normal component of stray field, being much smaller than the normal component of demag...