Memcapacitor emulator based on the Miller effect
Memcapacitor emulator based on the Miller effect
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DOI：
10.1002/cta.2604
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发表时间：
2019-04-01
影响因子：
2.3
通讯作者：
Rodriguez, Noel
中科院分区：
文献类型：
--
作者：
Romero, Francisco J.;Morales, Diego P.;Rodriguez, Noel
根据电压放大器中记忆电容与密勒效应之间的关系，设计并实现了一个基本的记忆电容电路仿真器。该仿真器在理论上采用自上而下的方法，从电路行为到忆阻器的记忆电容和电突变的本构方程的基础。然后，通过SPICE计算机模拟，给出了一种实用而简单的电路实现方法，即用一个双态磁通相关电阻绕过固态忆阻器，它根据输入信号的磁通调节放大器的增益。从其在现场可编程模拟阵列中的物理实现中提取系统的进一步电属性。最后，通过一个长时程增强的例子说明了记忆电容仿真器研究神经形态应用的功能。
This work provides the guidelines to design and implement an elemental memcapacitor circuit emulator based on the relation between memcapacitance and the Miller effect in voltage amplifiers. The emulator is presented theoretically in a top-down approach, from the circuit behavior to the foundations of the constitutive equations of the memcapacitance and the electrical mutation of a memristor. Then, a practical and simple circuit implementation is demonstrated by SPICE computer simulations, circumventing the solid-state memristor by a two-state flux-dependent resistor, which modulates the gain of the amplifier in consonance to the flux of the input signal. Further electrical properties of the system are extracted from its physical implementation in a field-programmable analog array. The work is concluded illustrating the functionality of the memcapacitor emulator to study neuromorphic applications with a long-term potentiation example.