Photoluminescence of magnesium and silicon doped cubic GaN
Photoluminescence of magnesium and silicon doped cubic GaN
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镁和硅掺杂立方氮化镓的光致发光
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
A. Kent
中科院分区：
文献类型：
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作者：
R. E. L. Powell;S. Novikov;C. T. Foxon;A. Akimov;A. Kent
我们研究了掺不同量镁（p型）或硅（n型）的立方氮化镓层的时间积分和时间分辨光致发光（PL）光谱和输运性质。在Mg掺杂材料中观察到一个宽蓝色峰，其起源尚未确定。我们的温度依赖和时间分辨的PL结果，以及在mg掺杂的立方GaN中观察到的强自补偿，使我们能够提出立方材料中这种发射起源的模型。（©2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim）
We have studied time-integrated and time-resolved photoluminescence (PL) spectra and the transport properties of cubic GaN layers doped with different amounts of either magnesium (p-type) or silicon (n-type). In Mg doped material a broad blue peak was observed whose origin in cubic material has not been well established. Our temperature dependent and time resolved PL results as well as the observation of strong self-compensation in Mg-doped cubic GaN have allowed us to present a model for the origin of this emission in cubic material. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)