Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation
Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation
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DOI：
10.1016/j.apsusc.2020.146791
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发表时间：
2020-10-15
影响因子：
6.7
通讯作者：
Uraoka, Yukiharu
中科院分区：
文献类型：
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作者：
Felizco, Jenichi Clairvaux;Uenuma, Mutsunori;Uraoka, Yukiharu
y非晶（a-IGZO）、c轴取向晶体（c-IGZO）和（cc-IGZO）晶体嵌入的c轴取向晶体InGaZnO的热电功率因数通过经由后退火进行氢掺入来优化。当使用纯N-2退火时，a-IGZO实现了最高的功率因数，而在N-2气氛中添加4%H-2显著提高了c-IGZO和cc-IGZO的功率因数。然而，无论退火条件如何，与a-IGZO和c-IGZO两者相比，cc-IGZO样品显示出较弱的性质。对于c-IGZO和cc-IGZO样品，H-2的存在在钝化氧相关缺陷方面是有效的，这转化为更好的电子传输，同时保持可观的塞贝克系数。另一方面，由纯N-2退火形成的大量氧空位可能不仅是a-IGZO的良好导电性的原因，而且也是相对良好的塞贝克系数的原因。建立后退火条件以最大化取决于结晶度的热电性能为未来商业透明IGZO热电器件铺平了道路。
y The thermoelectric power factor of amorphous (a-IGZO), c-axis aligned crystalline (c-IGZO) and (cc-IGZO) crystal-embedded c-axis aligned crystalline InGaZnO were optimized by performing hydrogen incorporation via post-annealing. Highest power factor was achieved for a-IGZO when annealing with pure N-2 was used, while adding 4% H-2 in the N-2 atmosphere significantly enhanced those of c-IGZO and cc-IGZO. However, the cc-IGZO samples displayed weaker properties compared to both a-IGZO and c-IGZO regardless of the annealing conditions. The presence of H-2 was effective in passivating oxygen-related defects for both the c-IGZO and cc-IGZO samples, which translated to better electron transport while maintaining a respectable Seebeck coefficient. On the other hand, the formation of a high amount of oxygen vacancies from annealing with pure N-2 was likely responsible not only for the good electrical conductivity of a-IGZO, but also for the relatively good Seebeck coefficients. Establishing the post-annealing conditions to maximize the thermoelectric properties depending on crystallinity paves the way for future commercial transparent IGZO thermoelectric devices.