A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application
A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application
复制标题
DOI：
10.1109/jeds.2019.2916399
复制
发表时间：
2019-05
影响因子：
2.3
通讯作者：
Kyoung-Il Do;Byung-Seok Lee;Yong-Seo Koo
中科院分区：
文献类型：
--
作者：
Kyoung-Il Do;Byung-Seok Lee;Yong-Seo Koo
双向硅控整流器（ddscr）是一种具有优异面积效率的ESD保护器件，可提供正负两种静电放电（ESD）浪涌路径。然而，ddscr在5v级应用中具有较低的保持电压，与单向scr相比，由于延长的ESD浪涌路径，具有相对较高的导通状态电阻。在本文中，我们提出了一种新型的DDSCR，具有更高的保持电压和更好的ESD容限，比传统的低触发DDSCR (ltddscr)，通过操作两个额外的寄生双极晶体管来实现。采用0.18- $\mu \text{m}$ CMOS工艺开发了该ESD保护器件，并采用时间线脉冲系统对其性能进行了验证。测量结果表明，所提出的ESD保护装置具有更好的容差和高保持电压，有望在5个v级应用中可靠
Dual-directional silicon-controlled rectifiers (DDSCRs), which provide both positive and negative electrostatic discharge (ESD) surge paths, are ESD protection devices with an excellent area efficiency. However, DDSCRs have a low holding voltage for use in 5 V-class applications, with a relatively high on-state resistance because of the elongated ESD surge path compared to unidirectional SCRs. In this paper, we propose a novel DDSCR with a higher holding voltage and a better ESD tolerance than conventional low-triggering DDSCRs (LTDDSCRs), realized by operating two additional parasitic bipolar transistors. The proposed ESD protection device was developed through a 0.18- $\mu \text{m}$ CMOS process, and a timeline pulse system was used to verify its properties. The measurement results show that the proposed ESD protection device exhibits an improved tolerance and a high holding voltage and is expected to be reliable in 5 V-class applications