Schottky-barrier thin-film transistors based on HfO2-capped InSe
Schottky-barrier thin-film transistors based on HfO2-capped InSe
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基于 HfO2 覆盖 InSe 的肖特基势垒薄膜晶体管
DOI：
10.1063/1.5096965
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发表时间：
2019-07-15
影响因子：
4
通讯作者：
Song, Aimin
中科院分区：
文献类型：
--
作者：
Wang, Yiming;Zhang, Jiawei;Song, Aimin
硒化铟（InSe）是一种新兴的二维半导体材料，是下一代薄膜晶体管（TFT）的候选材料。在这里，我们报告肖特基势垒TFT（SB-TFT），其中0.9 nm厚的HfO 2介电层封装InSe纳米片，从而保护InSe通道免受环境影响，并通过介电偶极子效应降低肖特基接触电阻。这些器件具有低饱和源漏电压Vsat < 2 V和高达J = 2 mA/mm的电流密度，非常适合低功率电子器件。我们提出了一个详细的分析，这种类型的晶体管使用的Y函数的方法，从中我们得到准确的估计的接触电阻和场效应mobility. InSe（InSe）是一种新兴的二维半导体和下一代薄膜晶体管（TFT）的有前途的候选人。在这里，我们报告肖特基势垒TFT（SB-TFT），其中0.9 nm厚的HfO 2介电层封装InSe纳米片，从而保护InSe通道免受环境影响，并通过介电偶极子效应降低肖特基接触电阻。这些器件具有低饱和源漏电压Vsat < 2 V和高达J = 2 mA/mm的电流密度，非常适合低功率电子器件。我们提出了一个详细的分析，这种类型的晶体管使用的Y函数的方法，从中我们获得准确的估计的接触电阻和场效应迁移率。
Indium selenide (InSe) is an emerging two-dimensional semiconductor and a promising candidate for next generation thin film transistors (TFTs). Here, we report on Schottky barrier TFTs (SB-TFTs) in which a 0.9-nm-thick HfO2 dielectric layer encapsulates an InSe nanosheet, thus protecting the InSe-channel from the environment and reducing the Schottky-contact resistance through a dielectric dipole effect. These devices exhibit a low saturation source-drain voltage Vsat < 2 V and current densities of up to J = 2 mA/mm, well suited for low-power electronics. We present a detailed analysis of this type of transistor using the Y-function method from which we obtain accurate estimates of the contact resistance and field-effect mobility.Indium selenide (InSe) is an emerging two-dimensional semiconductor and a promising candidate for next generation thin film transistors (TFTs). Here, we report on Schottky barrier TFTs (SB-TFTs) in which a 0.9-nm-thick HfO2 dielectric layer encapsulates an InSe nanosheet, thus protecting the InSe-channel from the environment and reducing the Schottky-contact resistance through a dielectric dipole effect. These devices exhibit a low saturation source-drain voltage Vsat < 2 V and current densities of up to J = 2 mA/mm, well suited for low-power electronics. We present a detailed analysis of this type of transistor using the Y-function method from which we obtain accurate estimates of the contact resistance and field-effect mobility.