Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm
Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm
复制标题
DOI：
10.1109/ted.2013.2282712
复制
发表时间：
2013-10
影响因子：
3.1
通讯作者：
R. Warburton;G. Intermite;M. Myronov;P. Allred;D. Leadley;K. Gallacher;D. Paul;N. Pilgrim;L. Lever;Z. Ikonić;R. Kelsall;E. Huante-Ceron;A. Knights;G. Buller
中科院分区：
文献类型：
--
作者：
R. Warburton;G. Intermite;M. Myronov;P. Allred;D. Leadley;K. Gallacher;D. Paul;N. Pilgrim;L. Lever;Z. Ikonić;R. Kelsall;E. Huante-Ceron;A. Knights;G. Buller
设计，建模，制造和表征的单光子雪崩二极管探测器与外延锗吸收区直接生长在硅上。在100 K时，测得1310 nm波长处的单光子探测效率为4%，暗计数率约为6兆计数/s，这是Ge-on-Si单光子雪崩二极管探测器的最低噪声等效功率（1×10-14 WHz-1/2）。1550 nm波长的检测效率测量与这样的设备的第一份报告。测量到300 ps的抖动，并且当选通频率从1 kHz增加到1 MHz时，对后脉冲的初步测试显示出归一化暗计数率仅有小的增加（因子2）。这些初步结果表明，集成在Si衬底上的优化器件可能会提供与许多商用分立技术相当或更好的性能。
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency measurements with such a device is presented. A jitter of 300 ps was measured, and preliminary tests on after-pulsing showed only a small increase (a factor of 2) in the normalized dark count rate when the gating frequency was increased from 1 kHz to 1 MHz. These initial results suggest that optimized devices integrated on Si substrates could potentially provide performance comparable to or better than that of many commercially available discrete technologies.