Tunnel magnetoresistance exceeding 100% in magnetic tunnel junctions using Mn-based tetragonal alloy electrodes with perpendicular magnetic anisotropy
Tunnel magnetoresistance exceeding 100% in magnetic tunnel junctions using Mn-based tetragonal alloy electrodes with perpendicular magnetic anisotropy
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DOI：
10.1063/5.0141706
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发表时间：
2023-03
期刊：
影响因子：
1.6
通讯作者：
Kazuya Z. Suzuki;S. Mizukami
中科院分区：
文献类型：
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作者：
Kazuya Z. Suzuki;S. Mizukami
我们研究了由垂直磁化的MnGa和FeCoB电极组成的MgO势垒磁性隧道结。在这些垂直（p-）MTJ，我们利用薄的亚稳bcc CoMn合金作为MnGa和MgO之间的夹层，以提高隧道磁阻（TMR）效应。此外，我们研究了薄Mg中间层之间的MnGa和CoMn的效果。由于夹层工程，我们实现了TMR比超过100%，这是对于具有四重MnGa电极的p-MTJ观察到的最高值。我们的研究有助于进一步发展的自旋电子器件使用p-MTJ与各种锰基tetrahydroxide合金电极。
We studied MgO barrier magnetic tunnel junctions (MTJs) comprising perpendicularly magnetized MnGa and FeCoB electrodes. In those perpendicular ( p-) MTJs, we utilized thin metastable bcc CoMn alloys as an interlayer between MnGa and MgO to enhance the tunnel magnetoresistance (TMR) effect. Moreover, we investigated the effect of a thin Mg interlayer between MnGa and CoMn. Owing to the interlayer engineering, we achieved a TMR ratio over 100%, the highest value observed for p-MTJs with a tetragonal MnGa electrode. Our study contributes to the further development of spintronic devices using p-MTJs with various Mn-based tetragonal alloy electrodes.