Emission properties of intrinsic and extrinsic defects in Cu2SnS3 thin films and solar cells
Emission properties of intrinsic and extrinsic defects in Cu2SnS3 thin films and solar cells
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DOI：
10.35848/1347-4065/abcf06
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发表时间：
2020-11
影响因子：
1.5
通讯作者：
A. Kanai;M. Sugiyama
中科院分区：
文献类型：
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作者：
A. Kanai;M. Sugiyama
采用低温光致发光（LT-PL）技术研究了Cu 2SnS 3（CTS）太阳电池中p-n界面的本征和非本征缺陷。本征缺陷进行了研究的基础上PL的CTS薄膜的依赖于激发功率和温度。观察到施主-受主对复合与浅受主（铜空位，V Cu）位于约18毫电子伏以上的价带最大值和典型的施主位于72和112毫电子伏以下的导带最小值（CBM）。测量了各种CTS太阳能电池结构的PL光谱，以识别由Cd从CdS层扩散形成的Cd相关缺陷。CdS/CTS太阳能电池在0.87 eV处观察到一个新的LT-PL峰，对应于位于CBM下方62 meV处的Cu位施主上与Cd的D-A对复合。通过Cd扩散和抑制界面复合的V Cu钝化，可以在CTS中形成p-n同质结。
Intrinsic and extrinsic defects around the p–n interface in Cu2SnS3 (CTS) solar cells were evaluated using low-temperature photoluminescence (LT-PL) measurements. The intrinsic defects were investigated based on the PL-dependence of CTS films on the excitation power and temperature. Donor–acceptor pair recombination was observed with shallow acceptors (copper vacancies, V Cu) located approximately 18 meV above the valence band maximum and typical donors located 72 and 112 meV below the conduction band minimum (CBM). The PL spectra of various CTS solar cell structures were measured to identify the Cd-related defects formed by Cd diffusion from the CdS layer. A new LT-PL peak was observed at 0.87 eV for the CdS/CTS solar cells, corresponding to D–A pair recombination with Cd on Cu site donors located 62 meV below the CBM. A p–n homojunction may form in CTS by V Cu passivation by Cd diffusion and suppressed interface recombination.