Oxygen precipitation in antimony‐doped silicon wafers
Oxygen precipitation in antimony‐doped silicon wafers
复制标题
DOI：
10.1063/1.96737
复制
发表时间：
1986-03
影响因子：
4
通讯作者：
F. D'aragona;P. Fejes
中科院分区：
文献类型：
--
作者：
F. D'aragona;P. Fejes
氧浓度的测量以及轻度和中度 Sb 掺杂晶圆的优先蚀刻表明，对于高温（1050 °C）退火，氧沉淀与掺杂剂浓度成反比，而对于低温（650 °C）退火，氧沉淀与掺杂剂浓度无关。这是根据非均质与均质沉淀机制来解释的。
Measurements of oxygen concentration as well as preferential etching of lightly and medium Sb‐doped wafers show that for high‐temperature (1050 °C) anneals the oxygen precipitation is inversely dependent on the dopant concentration, while it is independent of the dopant concentration for low‐temperature (650 °C) anneals. This is interpreted on the basis of a heterogeneous versus homogeneous precipitation mechanism.