Propagation of ripple patterns on Si during ion bombardment
Propagation of ripple patterns on Si during ion bombardment
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DOI：
10.1103/physrevb.88.075426
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发表时间：
2013-08
影响因子：
3.7
通讯作者：
H. Hofsäss;Kun Zhang;Hans-Gregor Gehrke;C. Brüsewitz
中科院分区：
文献类型：
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作者：
H. Hofsäss;Kun Zhang;Hans-Gregor Gehrke;C. Brüsewitz
通过扫描电子显微镜，借助聚焦离子束铣削制备的微米级标记结构，研究了在有或没有共沉积 Fe 表面活性剂原子的情况下由 Xe 离子照射产生的 Si 表面波纹的横向传播。对于以 62° 和 70° 之间的斜入射角照射 Si 的 10-keV Xe 离子，我们确定每 10Xe 离子/cm 的横向波纹传播速度从 -1.9 到 2.9 nm 变化。传播方向从与入射离子束的投影方向相反的方向改变为在窄角范围内沿着投影束方向。在 67° 时，图案几乎是静态的。该结果与 Bradley 和 Harper 的理论模型的预测非常吻合。对于垂直入射的 5-keV Xe 离子和 Fe 表面活性剂原子的倾斜共沉积，我们发现波纹图案以每 10Xe 离子/cm 约 -0.7 nm 的负波纹传播速度在表面上传播，即与 Fe 表面活性剂原子的投影沉积方向相反。基于用聚焦离子束系统设置的标记来确定横向波纹传播的新颖实验方法不需要原位分析，因此通常可以应用于分析离子束引起的图案的动力学。
The lateral propagation of surface ripples on Si, generated by Xe ion irradiation with and without codeposition of Fe surfactant atoms, was investigated by scanning electron microscopy with the help of micron-sized marker structures prepared by focused ion beam milling. For 10-keV Xe ion irradiation of Si at oblique incidence between 62 and 70°, we determine lateral ripple propagation velocities varying from −1.9 to2.9 nm per 10Xe ions/cm. The propagation direction changes from opposite to the projected direction of the incident ion beam to along the projected beam direction within a narrow angular regime. At 67°, the pattern is almost static. The result is in good agreement with predictions from the theoretical model of Bradley and Harper. For perpendicular incident 5-keV Xe ions and oblique codeposition of Fe surfactant atoms, we find that ripple patterns propagate across the surface with a negative ripple propagation velocity of about −0.7 nm per 10Xe ions/cm, i.e., opposite to the projected deposition direction of Fe surfactant atoms. The novel experimental method to determine the lateral ripple propagation based on markers set with a focused ion beam system does not require anin situanalysis and can therefore be applied in general to analyze the dynamics of ion beam-induced patterns.