SIMMWIC rectennas on high-resistivity silicon and CMOS compatibility
SIMMWIC rectennas on high-resistivity silicon and CMOS compatibility
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基于高电阻率硅和 CMOS 兼容性的 SIMMWIC 整流天线
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
E. Kasper
中科院分区：
文献类型：
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作者：
K. Strohm;J. Buechler;E. Kasper
采用硅单片毫米波集成电路（SIMMWIC）技术，在高电阻率硅衬底上实现整流天线（整流天线）。单片集成共面肖特基势垒二极管作为整流元件嵌入在不同的天线结构。p型和n型肖特基势垒二极管的截止频率均高达1 THz。整流天线与CMOS集成电路相结合，作为一个多芯片模块（MCM）安装在高电阻率硅衬底上的整流天线旁边。测得的放大率为32 dB。在94.6 GHz时，包括前置放大器在内的检波电路的最大灵敏度为1600 mV/mW/spl middot/cm/sup-2/。对于高频电路与低频控制和信号处理电子器件的单片集成，讨论了CMOS电路在高阻硅上的单片集成。
Rectifying antennas (rectennas) are realized on high-resistivity silicon substrates using silicon monolithic millimeter-wave integrated circuit (SIMMWIC) technology. Monolithically integrated coplanar Schottky barrier diodes are used as rectifying elements embedded in different antenna structures. Both p- and n-type Schottky barrier diodes are realized with cutoff frequencies up to 1 THz. The rectennas are combined with a CMOS preamplifier mounted as a multichip module (MCM) next to the rectenna on a high-resistivity silicon substrate. An amplification of 32 dB is measured. Maximum sensitivity of the detector circuit including preamplification is 1600 mV/mW/spl middot/cm/sup -2/ at 94.6 GHz. For a monolithic integration of high-frequency circuits with low-frequency control and signal-processing electronics, the monolithic integration of CMOS circuitry on high-resistivity silicon is discussed.