Covalent networks through on-surface chemistry in ultra-high vacuum: state-of-the-art and recent developments
Covalent networks through on-surface chemistry in ultra-high vacuum: state-of-the-art and recent developments
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DOI：
10.1039/c1cp20700h
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发表时间：
2011-01-01
影响因子：
3.3
通讯作者：
Gourdon, Andre
中科院分区：
文献类型：
--
作者：
Franc, Gregory;Gourdon, Andre
在过去的几年里，通过共价偶联较小的前体，直接在UHV条件下的表面上制造大分子器件已经成为分子电子学的一个有吸引力的解决方案。本文综述了这一新领域的潜力，从Ullmann型C-C耦合，环化脱氢和涉及异质元素的反应到绝缘薄膜上的2D聚合的最新技术和分析。机制的见解也提到，基板和2D限制的影响给出了初步的解释。然后提出了进一步发展的潜在前景。
The fabrication of large molecular devices, directly on surfaces in UHV conditions, by covalent coupling of smaller precursors has become in the past years an attractive solution for Molecular Electronics. This review presents the state-of-the-art and an analysis of the potential of this new field, from Ullmann type C-C coupling, cyclodehydrogenation, and reactions involving heteroelements to 2D polymerisation on insulating thin films. Mechanistic insights are also mentioned, giving preliminary explanations on the influence of the substrate and the 2D confinement. Potential perspectives for further developments are then evoked.