Lens-integrated asymmetric-dual-grating-gate high-electron-mobility-transistor for plasmonic terahertz detection
Lens-integrated asymmetric-dual-grating-gate high-electron-mobility-transistor for plasmonic terahertz detection
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DOI：
10.1109/mwsym.2017.8058632
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发表时间：
2017-06
期刊：
影响因子：
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通讯作者：
T. Hosotani;F. Kasuya;H. Taniguchi;Takayuki Watanabe;T. Suemitsu;T. Otsuji;T. Ishibashi;M. Shimizu;A. Satou
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文献类型：
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作者：
T. Hosotani;F. Kasuya;H. Taniguchi;Takayuki Watanabe;T. Suemitsu;T. Otsuji;T. Ishibashi;M. Shimizu;A. Satou
非晶双栅高电子迁移率晶体管（ADGG-HEMT）有望用于高响应度、室温工作和高速THz探测器。然而，由于自由空间太赫兹波的大聚焦光斑尺寸，它们的低光耦合效率是严重的问题之一。为了改善这一点，我们研究收缩太赫兹波的光斑尺寸通过将探测器与超半球硅透镜集成。我们报告的耦合效率的6倍的提高硅透镜集成。此外，我们表明，对入射太赫兹波频率的检测器模块的响应度的依赖性给出的产品的ADGG-HEMT的内部响应度和由于硅透镜的光耦合效率。
Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for high responsivity, room-temperature operating, and high-speed THz detectors. However, their low light coupling efficiency is one of the serious concerns because of the large focused spot size of free-space THz waves. To improve this, we examine shrinking the THz wave spot size by integrating a detector with a hyper-hemispherical silicon lens. We report the 6-fold enhancement of the coupling efficiency by the silicon lens integration. Also, we show that the dependence of the detector module responsivity on incident THz wave frequency is given by the product of the internal responsivity of ADGG-HEMTs and the light coupling efficiency owing to the silicon lens.