Polarization suppression in Pb(Zr,Ti)O3 thin films
Polarization suppression in Pb(Zr,Ti)O3 thin films
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DOI：
10.1063/1.359083
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发表时间：
1995-06
影响因子：
3.2
通讯作者：
W. L. Warren;D. Dimos;B. Tuttle;G. Pike;R. W. Schwartz;P. Clews;D. Mcintyre
中科院分区：
文献类型：
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作者：
W. L. Warren;D. Dimos;B. Tuttle;G. Pike;R. W. Schwartz;P. Clews;D. Mcintyre
Pb(Zr,Ti)O3薄膜的可切换极化可通过光学、热、电和还原等工艺抑制。通过在开关阈值附近偏置铁电体并用带隙光照射材料来实现光抑制效应；通过在开关阈值附近偏置铁电体并将材料加热到100°C来实现热抑制效应。电诱导抑制效应，称为电疲劳，是通过使铁电电容器反复极化反转而发生的。我们发现在这三种情况下被抑制的极化可以通过在铁电体中产生载流子而基本恢复到其初始极化值。这有力地表明，所有三种形式的降解主要涉及在畴边界上通过电子电荷捕获锁定畴。第四种形式的极化抑制，即还原处理，是通过在400℃下退火结晶的PZT薄膜得到的。
Switchable polarization can be suppressed in Pb(Zr,Ti)O3 thin films by optical, thermal, electrical, and reducing processes. The optical suppression effect occurs by biasing the ferroelectric near the switching threshold and illuminating the material with band gap light; the thermal suppression effect occurs by biasing the ferroelectric near the switching threshold and heating the material to ≊100 °C. The electrically induced suppression effect, known as electrical fatigue, occurs by subjecting the ferroelectric capacitor to repeated polarization reversals. We find that the suppressed polarization in these three cases can be restored to essentially its initial polarization value by creating electronic charge carriers in the ferroelectric. This strongly suggests that all three forms of degradation largely involve locking domains by electronic charge trapping at domain boundaries. The fourth form of polarization suppression, a reducing treatment, was obtained by annealing the crystallized PZT films at 400 °...