Manganite thin film/ZnO nanowire (nanosheets) p-n junctions
Manganite thin film/ZnO nanowire (nanosheets) p-n junctions
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DOI：
10.1063/1.2896307
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发表时间：
2008-03-10
影响因子：
4
通讯作者：
Wu, Tom
中科院分区：
文献类型：
--
作者：
Zhang, Zhou;Sun, Yinghui;Wu, Tom
我们制备了p型La（0.7）Sr（0.3）MnO（3）薄膜/n型ZnO纳米线（纳米片）异质结构。采用Zn源的低温生长和ZnO/石墨源的高温生长分别导致纳米线和纳米片的形成。虽然纳米片表现出与锰氧化物膜的外延关系，但高加工温度导致界面扩散和反应，这反映在X射线衍射、磁性和电输运测量中。锰氧化物薄膜/ZnO纳米线（纳米片）p-n结具有良好的整流特性。这种异质结构在电子和自旋电子器件中具有潜在的应用前景。(C)2008年美国物理学会。
We have fabricated p-type La(0.7)Sr(0.3)MnO(3) thin film/n-type ZnO nanowires (nanosheets) heterostructures. A lower-temperature growth with Zn source and a higher-temperature growth with ZnO/graphite source led to the formations of nanowires and nanosheets, respectively. While the nanosheets showed an epitaxial relationship with the manganite film, the high processing temperature resulted in interfacial diffusion and reaction, which were reflected in the x-ray diffraction, magnetic, and electrical transport measurements. The manganite thin film/ZnO nanowires (nanosheets) p-n junctions exhibited good rectification behaviors. Such heterostructures are promising to find potential applications in electronic and spintronic devices. (C) 2008 American Institute of Physics.